SK Hynix boasts the first 10nm DDR5 memory chips on its 1C node

SK Hynix, one of the leading memory manufacturers on the market, has announced the development of the first 16 Gb DDR5 memory chips (Gigabits, not to be confused with GigaBytes)) manufactured on their 10-nanometer 1C node.

Although other chips such as processors have already made the leap to processes with smaller nodes, DRAM memory chips have a different complexity that does not make them as suitable for process reduction, in fact, SK Hynix is ​​the first to achieve this. For this purpose it has implemented new materials in its EUV machinery (Extreme UltraViolet).

Mass production of the new 1c DDR5 memory chips will begin within a year, This is also the time when mass shipments to system and RAM module manufacturers will begin. This process is an improvement on the previous 1b process, as it is based on this process to maintain its stability and good performance.

With this technology, the company expects a 11% improvement in performance by reaching 8 Gbpsat the same time as improves energy efficiency by 9%. IInitially, these chips will be aimed at high-performance data centers, where they hope to be able to reduce consumption by 30% with these new memories.

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