Samsung will begin production of its ninth-generation 290-layer 3D NAND memory in May

Manufacturers continue to advance in the development and manufacturing of new NAND Flash memorieswhich are increasingly Faster and with higher density. According to we read in a Korean media, Samsung is preparing his new 290-layer 3D NAND memories ready for next month May. This ninth generation of memories surpasses the current octave of 236 layersapproaching the 300 as previously stated.

Although this type of memory has a higher cost By using more layers per wafer, Samsung has managed to reduce the number of connections with this type of double-stack memory, achieving benefits in this type of memory. It is also said that, at the beginning of 2025 and slightly delaying previous predictions, Samsung will start with the tenth generation of 3D NAND memories with 430 layers. This type of memory will require a triple stack. In addition to Samsung, it seems that SK Hynix will also increase this figure to 430 layers for the second half of 2025.

A claim that seeks meet the needs of Artificial Intelligence companies that need memory faster and higher capacity. Samsung wants to cover this segment, which will need high capacity for data processing. Samsung has competition, since other manufacturers will also start with memories of more than 300 layers towards the middle of this year.

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