to offer Higher speeds and more capacity storage in the new V-NAND flash memories, manufacturers are addressing problems that are presented with these next generations. Samsung is already producing his ninth generation memorywhich has 286 layersbut overcoming the 300-layer barrier has been quite a challenge. Getting memories with more than 300 layers made it memories will be damaged frequently, so they have had to resort to other manufacturing systems.
Samsung wants to manufacture V-NAND flash memories 400 layers by 2026this has been a challenge when facing these problems in memories with more than 300 layers. To solve the problem, Samsung has developed the tenth generation of these memories that will use the Vertical NAND Bonding technology. For this will manufacture the storage and circuitry needed separatelystacking them later. This will change the current Co-Packaged stack to offer a Higher bit density in the same area up to 60% more.
By 2027, Samsung wants to have its eleventh generation of this type of memoriesand even chips with 1,000 layers by 2030. But Samsung also has plans for its DRAM memories, where it plans to build new memories manufactured at 10 nm by the middle of next year and start with the seventh generation of memories built below 10 nanometers, with a 3D vertical transistor structure, similar to that used for NAND flash memory.
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Juan Antonio Soto
I am a Computer Engineer and my specialty is automation and robotics. My passion for hardware began at the age of 14 when I broke down my first computer: a 386 DX 40 with 4MB of RAM and 210MB of hard drive. I continue to give free rein to my passion in the technical articles I write for Geeknetic. I dedicate most of my free time to video games, contemporary and retro, on the more than 20 consoles I have, in addition to the PC.
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