Memory manufacturer Micron has announced its new high-performance UFS 4.0 memory chips for high-end smartphones. These new chips are made up of 232-layer 3D-stacked NAND Flash memory cells, along with their own low-power controllers and company-developed firmware.
These are the first chips for smartphones that use Micron’s 232-layer technology, with which it is possible to double the writing bandwidth and increase the reading speed by 75%. Specifically, it is about memories TLC type 3D NAND Flash (triple level cells).
With all these elements together, Micron’s UFS 4.0 memories promise speeds of more than 4 GB/s of access speed. Specifically, we have up to 4.3 GB/s of sequential reading speeds and 4 GB/s of writing of the same type, bringing speeds typical of NVMe 1.4 SSDs to smartphones like those that exist for PCs.
Additionally, these chips are 25% more energy efficient than the company’s previous generation of memory, along with 10% faster write latency than the competition, according to Micron’s own data.
For now, Micron is shipping the first 232-layer UFS 4.0 chips to manufacturers now so they can test them on their devices, with chips of 256 GB, 512 Gb and up to 1 TB of capacity. During this second half of the year 2023, Micron will begin large-scale manufacturing of these chips, so we may not see them in smartphones until the end of the year or early next year.
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Anthony Delgado
Computer Engineer by training, writer and hardware analyst at Geeknetic since 2011. I love gutting everything that comes my way, especially the latest hardware that we receive here for reviews. In my free time I mess around with 3d printers, drones and other gadgets. For anything here you have me.
