Intel Foundry introduces new materials and advanced technologies for chip manufacturing and packaging

The division of Intel foundryknown as Intel Foundryhas received a boost from Pat who recently announced his retirement. But go on adding news to meet the demand that Artificial Intelligence generates these days, with manufacturing processes and an advanced packaging system.

Intel has presented new materials that offer up to 25% more capacitance thanks to the Ruthenium. This new material allows more effective connectionsfurther small and what they offer less resistance. We can see this advanced interconnection system in future advanced Intel nodes.

He has also presented a new technology for advanced SLT packaging (Selective Layer Transfer), with up to 100 times faster. This will allow the packaging of 15,000 tiles in minutescompared to several hours and even days, time that would take with other technologies. This offers some thinner chips and allowing smaller die sizeswhich gives rise to higher density offering solutions more economical and flexible even reducing the size.

Another novelty is about the GAA Silicon RibbonFET CMOS Transistors whose door has been reduced to 6nm. This allows reducing the time for increase performancewhich allows us to continue complying with Moore’s Law. Intel has also shown its progress with transistors 2D GAA NMOS and PMOS FETs which have a door length of 30nm that will help in the manufacturing of semiconductors of the future.

In addition, Intel showed its advances in research of gallium nitride (GaN) technology of 300 millimeters, a technology that will allow increase voltage and that will endure higher temperatures than silicon. This type of transistor has use in radio frequency and electronics which requires greater power, and which will also improve advanced integration schemes.

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